原子层通过层次增长沉积了氧化缓冲层,用于高效的半透明矿太阳能电池
Lingen Yao1,2, Buchao Chen2,3, Zerong Li1,2
1School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China.
Small (Weinheim an der Bergstrasse, Germany)
|October 7, 2025
概括
氧化锡 (SnO2) 缓冲层的原子层沉积 (ALD) 对太阳能电池至关重要. 改变前体序列可以增强核化,形成密集的薄膜,提高半透明矿太阳能电池的功率转换效率和稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 可再生能源可再生能源是可再生能源.
- 纳米技术 纳米技术
背景情况:
- 锡氧化物 (SnO2) 的原子层沉积 (ALD) 对于高性能半透明矿石太阳能电池 (ST-PSC) 和矿/联太阳能电池至关重要.
- 在ALD中基质的低反应性可能导致岛屿生长,针孔和设备性能降低.
研究的目的:
- 开发一种简单的方法来制造密集和均的ALD SnO2缓冲层.
- 通过优化ALD SnO2层来提高ST-PSC和联太阳能电池的性能和稳定性.
主要方法:
- 通过逆转ALD前体引入序列 (氧前体首先) 激活基质核化.
- 使用优化ALD SnO2缓冲层制造的ST-PSC和矿/二联太阳能电池.
- 评估设备性能 (功率转换效率) 和稳定性 (湿度和热量).
主要成果:
- 经过修改的ALD过程将岛屿状生长转变为层层增长,产生密集的,垂直均的SnO2膜.
- 在ST-PSC中,初始功率转换效率 (PCE) 从19.37%提高到19.99% (3.2%的改善).
- 矿/双联太阳能电池实现了28.77%的PCE.
- ST-PSCs表现出增强的稳定性,在600小时的湿度和热应激后分别保持96.6%和95.6%的初始PCE.
结论:
- 一个简单的前体序列调整有效地创建密集的ALD SnO2缓冲层.
- 这种方法显著提高了ST-PSC和联太阳能电池的性能和稳定性.
- 优化的ALD SnO2层显示了各种光电设备的潜力.
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