高性能和可扩展的铁电二极管通过2D-MoS2缓冲层在低热预算下启用
Seungkwon Hwang1,2, Kyumin Lee1, Laeyong Jung1
1Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
Small (Weinheim an der Bergstrasse, Germany)
|October 7, 2025
概括
这项研究展示了一种高性能铁电二极管,使用氧化 (HZO) 和二硫化 (MoS2) 进行先进的非挥发性记忆. 这种新的设计实现了出色的开启/关闭比率,耐久性和保留性,克服了以前铁电记忆技术的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 基于哈夫 (Hf0.5Zr0.5O2,HZO) 的铁电器为非挥发性内存提供了强大的偏振切换,但遭受了低的开/关比,高泄漏率和低耐久性.
- 原子层沉积 (ALD) 兼容性使HZO适用于双终端 (2-T) 存储器件中的超薄膜.
研究的目的:
- 开发一个高性能铁电二极管 (FE-二极管) 用于后端线 (BEOL) 兼容的内存应用.
- 通过优化薄膜厚度和整合2D MoS缓冲层来克服HZO铁电的局限性.
主要方法:
- 在400°C以下制造W/MoS2/HZO/TiN堆FE-二极管.
- 优化HZO厚度 (3-8nm) 以将传导机制从直接道化转移到Schottky发射.
- 通过低温等离子增强CVD (<300°C) 合成2D MoS2缓冲层.
主要成果:
- 实现了50 A cm-2 (在3 V) 的高电流密度和超过2 × 10 6的电阻比.
- 经过1010周期的耐用性和在室温下保持10年的稳定记忆.
- 成功制造了一个1K (32 × 32) 的内存阵列,证实了设备的可扩展性.
结论:
- W/MoS2/HZO/TiN FE-二极管设计显著提高了非易失性内存的性能和稳定性.
- 整合MoS2可以最大限度地减少接口缺陷,提高设备的可靠性.
- 这种FE-二极管由于其高性能和BEOL兼容性,显示了下一代集成内存应用的巨大潜力.
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