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Updated: Jan 15, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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量子缺陷在2D过渡金属二甲基二甲基因化物为特拉赫兹技术

Jingda Zhang1, Su Ying Quek1,2,3,4,5

  • 1Department of Physics, National University of Singapore, Singapore 117551, Singapore.

ACS nano
|October 7, 2025
PubMed
概括

研究人员在2D材料中发现了新的量子缺陷,这些材料具有独特的太赫兹特性. 这些缺陷可能使高温量子计算和太赫兹单光子发射成为可能,从而推进量子技术.

关键词:
二维量子缺陷是什么?二维量子缺陷是什么?大零场分裂的大零场分裂替代性兴奋剂是一种替代性兴奋剂.太赫兹技术是太赫兹技术.过渡金属二甲基二甲基化物.

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相关概念视频

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
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