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Updated: Jan 15, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
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在扭曲的WSe2四层中,相对论Mott过渡

Liguo Ma1,2, Raghav Chaturvedi1, Phuong X Nguyen1,3

  • 1School of Applied and Engineering Physics and Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.

Nature materials
|October 8, 2025
PubMed
概括

研究人员观察到由扭曲的WSe2四层制成的人工石墨烯中的相对论Mott过渡. 这一突破允许研究强相关的迪拉克费米子,模仿石墨烯.

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