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通过电极工程来增强Ta₂O₅/HfO₂基于Memristors的物理随机性,以实现真正的随机数生成

Bei Jiang^1,2, Yong Wang¹, Yahui Qing¹

¹Key Laboratory of Intelligent Sensing System and Security of the Ministry of Education, Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, China.

|October 9, 2025

概括

具有单极开关特性的memristor设备为真正随机数生成器 (TRNG) 提供了增强的性能. 这项研究表明,一种新的TRNG实现了高吞吐量,并通过了安全应用的严格随机性测试.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
计算机科学计算机科学

背景情况:

真正随机数生成器 (TRNG) 对于安全的数据传输至关重要.
记忆器利用固有的切换变化,为TRNG提供了一个有前途的途径.
顶部电极材料对TRNG应用的memristor特性的影响需要详细调查.

研究的目的:

研究不同顶部电极 (Ag,Ta,Pt) 的Ta₂O₅/HfO₂/Pt记忆体的性能和不稳定性.
探索这些memristors作为TRNG电路的源的潜力.
为了优化基于memristor的TRNG,以提高吞吐量和连续性.

主要方法:

使用Ag,Ta和Pt顶部电极制造和表征Ta₂O₅/HfO₂/Pt记忆体.
分析memristor切换行为 (挥发性,双极性,单极性) 和相应的传导机制.
将单极记忆器集成到TRNG电路中,并使用NIST SP 800-22随机性测试进行性能评估.

主要成果:

带有Ag,Ta和Pt电极的memristors分别表现出挥发性,双极性和单极性.
单极Pt/Ta₂O₅/HfO₂/Pt设备证明了其适用于提高TRNG吞吐量和连续性.
一个基于 memristor 的优化单极 TRNG 实现了 ~160 kb/s 的吞吐量,并通过了所有 15 个 NIST SP 800-22 测试.

结论:

单极记忆体作为高性能TRNG的有效源.
开发的基于memristor的TRNG显示出在物联网 (IoT) 应用中保护加密传输的巨大潜力.
通过电极选择量身定制memristor特性是优化TRNG性能的关键.

关键词:

电极工程是电极的工程.纪念馆是为了纪念.安全原始的安全原始的真正的随机数发生器一个单极的单极.

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