在韦尔半金属中,无序驱动的非安德森转换
Cong Li1, Yang Wang1, Jianfeng Zhang2
1Department of Applied Physics, Kungliga Tekniska högskolan Royal Institute of Technology, Stockholm 11419, Sweden.
概括
研究人员在实验中观察到一种由韦尔半金属NdAlSi.Si.中的混乱驱动的新型量子相位过渡. 这种非安德森过渡抑制了拓表面状态,为这种理论上预测的现象提供了第一个直接证据.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 量子材料科学 量子材料科学
背景情况:
- 一个长期以来的信念认为,无序的电子系统只表现出安德森定位驱动的金属绝缘体过渡.
- 最近的理论预测一种明显的疾病驱动的非安德森阶段过渡,但实验证据一直缺乏.
研究的目的:
- 通过实验证明和描述由混乱驱动的非安德森相位过渡.
- 为了可视化微尔半金属在不同级别的混乱下电子结构的变化.
主要方法:
- 使用角度分辨率光辐射光谱学 (ARPES) 来探测电子结构.
- 研究了具有受控表面障碍的韦尔半金属NdAlSi.
主要成果:
- 在NdAlSi中观察到所有表面状态的抑制,包括拓的费米弧,随着越来越多的混乱.
- 将费尔米弧的消失与拓不变量的消失联系在一起.
- 确定了从韦尔半金属到扩散金属的量子相变.
结论:
- 提供了第一个非安德森障碍驱动量子相位过渡的直接实验证据.
- 证实了量子系统中新型相位过渡机制的理论预测.
- 突出了混乱在从根本上改变半金属的拓性质中的作用.
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