磁道交叉点由丰富的材料制成,用于内存和动态应用
Mariusz Cierpiał1, Dawid Maślanka1, Kacper Gubała1
1Institute of Electronics, AGH University of Krakow, Al. Mickiewicza 30, 30-059, Kraków, Poland.
Scientific reports
|October 9, 2025
概括
这项研究介绍了一种新的无合成反铁磁结构,用于磁道连接 (MTJs). 这一进步使得使用丰富的材料进行高效的数据存储,提高了热稳定性并降低了制造成本.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 磁道连接 (MTJs) 对于数据存储至关重要,它利用垂直磁性异性质来实现高效的切换和热稳定性.
- 当前的MTJ参考层通常使用合成反铁磁 (SAF) 结构,使用较少的材料,如 (Pt) 或 (Pd).
研究的目的:
- 为使用丰富的Ni-Co超级网格的MTJ开发一个没有Pt的SAF结构.
- 为了评估MTJ纳米支柱的性能,结合这种新的SAF结构.
主要方法:
- 使用基于Ni-Co超级的无PtSAF参考层制造MTJ纳米柱.
- 参考层的切换场的特征 (250 mT以上).
- 测试MTJ纳米支柱 (直径低至80nm) 的切换行为,道磁阻,热稳定性和切换电流密度.
主要成果:
- 在MTJ纳米支柱中展示了强大的切换行为,使用电压脉冲范围从1ms到5ns.
- 实现了高道磁阻 (TMR) 的高达140%.
- 已证实高热稳定性和开关电流密度为2.6MA/cm2的开发的MTJ.
结论:
- 基于Ni-Co超级网格的SAF结构为MTJ制造提供了一个可行的,无Pt的替代方案.
- 这种方法为使用易于获得的材料设计具有成本效益和高性能的MTJ铺平了道路.
- 开发的MTJ显示了下一代数据存储应用程序的有希望的特性.
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