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可转移的高晶矿铁电材料用于低功率内存

Tianqing Wan, Yiping Xiao, Zhihang Xu

¹School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430000, China.

|October 10, 2025

概括

使用可转移 bismuth ferrite (BiFeO3) 的铁电场效应晶体管 (FeFET) 提供低功耗内存解决方案. 这项研究展示了高质量的BiFeO3集成,用于高效,紧的FeFET和计算系统.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
设备工程设备工程

背景情况:

数据中心的应用程序需要节能和紧的内存.
铁电场效应晶体管 (FeFET) 具有潜力,但面临着物质限制.
开发具有低开关能量的兼容铁电材料至关重要.

研究的目的:

为了研究可转移 bismuth ferrite (BiFeO3) 与低功率 FeFETs 的二维材料的集成.
描述BiFeO3薄膜的铁电特性及其在FeFET设备中的性能.
为了展示一个紧的,全FeFET计算系统用于模式分类.

主要方法:

转移高质量的矿铁电BiFeO3薄膜.
制造金属铁电半导体 (MFS) 和金属铁电金属绝缘体半导体 (MFMIS) FeFET结构.
与二硫化 (MoS2) 集成,形成高质量的接口.
用于内存和计算应用的设备特性和性能评估.

主要成果:

转移的BiFeO3薄膜表现出低强迫场 (30kV/cm) 和泄漏电流 (<10^-5 A/cm^2),产生0.05 J/cm^3.3的切换能量.
在MFS和MFMISFeFET中,功耗较低 (分别为1.5 fJ/bit/μm^2和11.2 fJ/bit/μm^2).
成功构建了一个功能性的全FeFET计算系统,用于模式分类.

结论:

可转移的高质量的BiFeO3是低功耗FeFET的可行材料.
开发的FeFET可实现高效的挥发性和非挥发性内存操作.
这项工作突出了基于BiFeO3的FeFET在未来低功耗内存和计算系统中的潜力.

关键词:

铁电场效应晶体管铁电场效应晶体管低功耗的内存存储器可以神经形态计算是一种神经形态计算.可转移的矿石 (perovskite) 是一种可转移的矿石.这是二维材料的二维材料.

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