相关实验视频

Updated: Jan 15, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.1K

在β-Ga2O3中打破p型兴奋剂屏障:一种基于GaN的异质连接双极晶体管,具有高增益,高破坏性和射频能力

Phuc Hong Than1, Tho Quang Than2, Yasushi Takaki3

  • 1Duy Tan University (DTU) 3 Quang Trung, Hai Chau Danang 550000 Vietnam thanhongphuc@duytan.edu.vn.

RSC advances
|October 10, 2025
PubMed
概括

这项研究引入了一种新的氧化/化异界双极晶体管 (HBT),克服了氧化中的p型兴奋剂挑战. 模拟设备表现出卓越的功率电子性能,包括高断电压和频率响应.

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