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高效的深紫外线发光二极管没有电子阻断层,由高含量跨度超级晶格p型区域启用

Xien Sang¹, Aoxiang Zhang¹, Xin Wang¹

¹National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China.

ACS applied materials & interfaces

|October 10, 2025

概括

这项研究通过使用一种新的p型超晶格设计来增强深紫外线发光二极管 (DUV-LED). 这种方法改善了孔注入和电子泄漏,提高了无电子阻断层的DUV-LED性能.

科学领域:

光电学是指光电子产品.
半导体设备半导体设备
材料科学材料科学材料科学

背景情况:

深紫外线发光二极管 (DUV-LED) 由于孔注入和电子泄漏差,因此存在较低的外部量子效率 (EQE).
传统的DUV-LED设计通常依赖于电子阻断层 (EBL),这可能会带来额外的挑战.

研究的目的:

为了研究p型超级格子与不同组成对DUV-LED性能的影响.
通过先进的p型带工程来探索传统EBL的替代方案.

主要方法:

使用SiLENSe模块模拟六个DUV-LED结构,集成施罗丁格-波松和漂移-扩散模型.
分析带图和载波分布,以了解设备物理.

主要成果:

结构F,具有分级Al_0.8Ga_0.2N/Al_0.6Ga_0.4N超级格子,没有EBL,实现了最高的EQE (6.3%) 和光学输出功率 (25mW).
分级超网格设计有效地增强了孔注入,并抑制了电子泄漏.
渐进的价值带配置和超级网内的加强电子屏障被确定为提高性能的关键因素.

结论:

消除EBL并采用分级的p型超级网格是高性能DUV-LED的可行策略.
P型频段工程提供了一条有效的途径,以克服DUV-LED效率的局限性.
开发的双功能超级晶格设计为DUV-LED技术带来了有前途的进步.

关键词:

这里是AlGaNN.高Al含量跨越超级格子p型区域的p型区域.发光二极管是一种发光二极管.p型频段工程设计 p型频段没有电子阻断层.

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相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...