旋转轨道扭矩辅助电压控制磁化开关,提供可靠的非挥发性内存
Qingyuan Shu1, Yang Cheng1, Albert Lee1
1Department of Electrical and Computer Engineering, University of California, Los Angeles 90095, United States.
ACS nano
|October 11, 2025
概括
我们将电压控制磁随机存储器 (VC-MRAM) 的写错率降低了两倍以上. 这种混合方法使用旋转轨道扭矩 (SOT) 协助电压控制,改善未来内存应用的能源效率.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 电压控制的磁性随机访问存储器 (VC-MRAM) 通过电压控制的磁性异构 (VCMA) 效应提供超快速切换 (<1 ns) 和低写能 (
- 由于电压切换振荡,VC-MRAM中的高写错率 (WER) 限制了其实际应用,并要求精确的脉冲定时.
- 旋转轨道扭矩 (SOT) 能够实现超快的磁化切换,在依赖于磁性异质的关键电流值以上.
研究的目的:
- 为VC-MRAM开发一种混合开关模式,以减少写错率.
- 为了研究使用亚临界旋转轨道扭矩 (SOT) 电流来协助电压控制磁性异构性 (VCMA) 切换.
- 评估SOT辅助VC-MRAM在内存计算应用中的性能提升和适用性.
主要方法:
- 使用Ta/Mo种子层制造一个后端兼容的设备.
- 实现混合模式操作,结合VCMA和亚临界SOT电流.
- 在不同操作模式下描述磁性切换动态和写错率.
- 微磁模拟用于分析磁化动态和自由能量变化.
主要成果:
- 演示了一种混合模式,利用亚临界SOT电流来协助VCMA诱导的Ta/Mo设备的切换.
- 与传统VC-MRAM相比,VC-MRAM的写错率降低了两个以上的数量级.
- 观察到修改的磁化动态和微磁自由能变化,有助于改善WER.
- 报告了一种增强的能量延迟产品,超过了传统的VC-MRAM.
结论:
- SOT辅助的VC-MRAM显著提高了可靠性和能源效率.
- 混合方法克服了纯VCMA切换的局限性.
- SOT辅助的VC-MRAM是先进的内存计算应用程序的一个有前途的技术,包括二进制神经网络.
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