,

Qingyuan Shu1, Yang Cheng1, Albert Lee1

  • 1Department of Electrical and Computer Engineering, University of California, Los Angeles 90095, United States.

ACS nano
|October 11, 2025
PubMed
概括

我们将电压控制磁随机存储器 (VC-MRAM) 的写错率降低了两倍以上. 这种混合方法使用旋转轨道扭矩 (SOT) 协助电压控制,改善未来内存应用的能源效率.

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