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Updated: Jan 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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侧面半导体自由空间门晶体管

Glen Isaac Maciel García1, Vishal Khandelwal1, Ganesh Mainali2

  • 1Applied Physics Program, Physical Sciences and Engineering (PSE) Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia.

Nano letters
|October 11, 2025
PubMed
概括

研究人员开发了一种新的半导体自由空间门晶体管 (SFGT) 架构. 这种创新的设计可以在没有固体介电层的宽带间隙半导体和超宽带间隙半导体中实现高性能.

关键词:
断裂电压的故障电压是什么场效应晶体管电晶体管.自由空间介电器的介电器.这是一个纳米道.这就是β-Ga2O3的含量.

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