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Updated: Jul 4, 2026

Synthesis and Functionalization of 3D Nano-graphene Materials: Graphene Aerogels and Graphene Macro Assemblies
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氧化时间对缺陷密度和晶度的影响 通过改进的汉默方法合成的石墨烯氧化物

Shivang Saxena1, Akshay Kumar2, Naveen Yadav1

  • 1Department of Materials Convergence and System Engineering, Changwon National University, Changwon, Gyeongnam 51140, Republic of Korea.

The journal of physical chemistry letters
|October 13, 2025
PubMed
概括

在石墨烯氧化物合成过程中控制氧化时间是关键. 这项研究揭示了反应持续时间如何影响氧化石墨烯的结构和特性,从而使应用程序能够得到更好的控制.

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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...