相关实验视频

Updated: Jan 15, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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通过人工微结构工程操纵气相关的绝缘体-金属过渡

Xuanchi Zhou1,2, Xiaohui Yao1, Wentian Lu1,2

  • 1Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan, 030031, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|October 13, 2025
PubMed
概括

在二氧化 (VO2) 中设计的微结构加速扩散,使得更快,更高效的质子装置成为可能. 这一突破克服了控制电子系统的速度限制.

关键词:
与之相关的氧化物.电子相位过渡电子相位过渡的扩散是由于的扩散.离子进化的离子演变.微观结构工程是微观结构的工程.

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Atomically Traceable Nanostructure Fabrication12:35

Atomically Traceable Nanostructure Fabrication

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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