应变诱导的半金属铁磁性和Fe2CrGe中的大型异常霍尔效应
Mainak Dey Sarkar1, Palash Nath2, Debnarayan Jana1
1Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata-700009, India. djphy@caluniv.ac.in.
Physical chemistry chemical physics : PCCP
|October 14, 2025
概括
我们在Fe2CrGe中探索了磁性拓半金属,发现应变可以诱导半金属铁磁相. 这种材料由于其拓性质和异常的霍尔导电性,显示出对自旋电子的潜力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 这就是Spintronics.
背景情况:
- 磁拓半金属 (TSM) 的时间逆向对称性被打破,具有独特的拓性质.
- 了解磁性和拓之间的相互作用对于新型电子应用至关重要.
研究的目的:
- 研究完整的Heusler化合物Fe2CrGe.Ge的磁性和拓性质.
- 探索单轴应变对其电子和磁相的影响.
- 评估其用于自旋电子设备的潜力.
主要方法:
- 密度函数理论 (DFT) 的计算.
- 基于Ising模型的蒙特卡洛模拟.
- 分析带拓,贝里曲率和异常的霍尔导电性.
主要成果:
- Fe2CrGe的基本状态是反铁磁 (AFM) 金属,可以通过应变调整到半金属铁磁 (HMF) 阶段.
- 压力和拉力应变均保持HMF特征,高达3%.
- 间隙节点线和以对称性保护的韦尔点 (WPs) 随着旋转轨道合 (SOC) 和磁化而出现.
- 显著的内在异常霍尔导电性 (AHC) 源于强大的果曲率.
结论:
- 铁2CrGe是压力工程自旋电子学的一个有前途的材料.
- 应变诱导的HMF阶段和非零的AHC支持其在拓式自旋电子学中的使用.
- 它可以充当应变控制的霍尔开关.
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