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Updated: Jan 15, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

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扩展InSe晶体结构,减少高性能场效应晶体管的内在缺陷

Zhenhua Wang1, Min Jin2, Kepeng Song3

  • 1Institute of Marine Science and Technology, Shandong University, Qingdao, 266273, China.

Advanced materials (Deerfield Beach, Fla.)
|October 14, 2025
PubMed
概括

太空中生长的化 (InSe) 减少了内在缺陷,从而产生了高性能场效晶体管 (FET). 这种太空生长的InSe与地面生长的材料相比,具有增强的电气和光电性能.

关键词:
一个人的内心.内在缺陷是一种内在的缺陷.格子扩张的格子扩张.空间-增长的空间.

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