高性能和低泄漏的异质连接10nm PZT NC-FinFET用于低功耗应用
Suman Lata Tripathi1, Neeraj Nayan Prakash2, Balwinder Raj3
1Department of E & TC, Symbiosis Institute of Technology, Pune Campus, Symbiosis International (Deemed University), Pune, India. tri.suman78@gmail.com.
Scientific reports
|October 14, 2025
概括
设计人员面临着晶体管缩放的挑战. 一种具有Si-SiGe接口的新型PZT负电容 FinFET (NC-FinFET) 为低功耗数字电路提供了更好的性能和更低的功耗.
科学领域:
- 半导体设备物理学 半导体设备物理
- 材料科学是一种材料科学.
- 纳米电子学纳米电子学
背景情况:
- 晶体管缩放面临诸如功率增加和低值导电等挑战.
- 需要新的材料和架构来维持在较低技术节点的性能.
研究的目的:
- 设计和评估一种具有Si-SiGe接口的新型10nm n通道PZT负电容 FinFET (NC-FinFET).
- 评估其适用于低功耗数字电路的适用性,并与传统的FinFET进行比较.
主要方法:
- 使用Si-SiGe接口设计一个10nm n通道PZTNC-FinFET异质连接的设计.
- 使用3D视觉TCAD工具进行性能评估.
- 与高K介电 FinFET 的比较.
主要成果:
- 拟议的NC-FinFET具有10^9的高离子/Ioff比率和高过导率 (1.73 × 10^-6 A/V).
- 在30.5 mV/dec和55.54 mV/dec之间实现了对子值参数的优异控制,其子值斜率 (SS) 为30.5 mV/dec.
- 证明了低泄漏电流和静电消耗.
结论:
- 带有Si-SiGe接口的PZT NC-FinFET是低功耗应用程序的一个有希望的架构.
- 该研究通过对n通道和p通道设备的分析证实了CMOS兼容性.
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