基于铁电的高性能电子和热电器件 In2Se3/抗烯异构结构
Anwar Ali1,2,3, Wen Zhang4, Iqtidar Ahmad1
1College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
Physical chemistry chemical physics : PCCP
|October 15, 2025
概括
In2Se3/Sb异构结构显示了增强的电子和热电特性,显著降低了导热率和高效率用于冷却应用.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二维 (2D) 抗 (Sb) 和铁电In2Se3具有独特的电子特性.
- 异构结构为新的材料功能提供了潜力.
研究的目的:
- 理论上研究In2Se3/Sb异构结构的电子和热电特性.
- 评估这种异构结构在热电和冷却应用中的潜力.
主要方法:
- 使用HSE06混合功能计算的第一原则.
- 博尔兹曼运输理论.
- 分析电子带结构,热导率和热电参数.
主要成果:
- 与单个单层相比,In2Se3/Sb异构结构的电子传输性能得到了改善.
- 由于强烈的声子合,格子导热率显著降低.
- 高西贝克系数 (高达2030μV K-1) 和优点数字 (p型兴奋剂在700K时约为3.6).
- 高热电转换效率 (高达22%) 和热能制冷效率 (高达卡诺特极限的23.8%).
结论:
- 在In2Se3/Sb的异构结构显示出优异的热电性能和高级冷却的潜力.
- 它的低导热率和高的西贝克系数使其成为热电器件的有希望的候选者.
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