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一个面积高效的读出电路,用于高SNR的三倍获取LOFIC CMOS图像传感器

Ai Otani¹, Hiroaki Ogawa¹, Ken Miyauchi^1,2

¹Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan.

Sensors (Basel, Switzerland)

|October 16, 2025

概括

本研究介绍了一种面积高效的读出电路,用于三倍增益的侧面溢出集成电容 (LOFIC) CMOS图像传感器 (CIS). 新设计改善了高动态范围 (HDR) 成像中的信号噪声比 (SNR) 性能.

科学领域:

电气工程电气工程
计算机视觉计算机视觉
半导体设备半导体设备

背景情况:

高动态范围 (HDR) 成像对于先进的视觉应用至关重要.
侧向溢出集成电容 (LOFIC) CMOS图像传感器 (CIS) 通过结合高转换增益 (HCG) 和低转换增益 (LCG) 信号提供HDR功能.
由于LCG信号中的像素噪声,HCG到LCG信号切换点发生了信号噪声比率 (SNR) 的下降.

研究的目的:

为三倍增益的LOFIC CIS提出一个面积高效的读出电路.
为了解决双增益LOFIC CIS中的SNR下降问题.
为了提高CMOS图像传感器中的HDR成像性能.

主要方法:

开发了一种用于三倍增强LOFIC CIS的新型读出电路.
采用放大器和电容器共享技术用于HCG,中转换增益 (MCG) 和LCG信号处理.
使用0.18μm CMOS工艺制造了一个测试芯片.

主要成果:

对于拟议的读出电路,只实现了7.6%的空头面积.
与双增益LOFIC CIS读出电路相比,SNR下降幅度提高了8.05dB.
通过芯片制造证明了面积高效设计的可行性.

结论:

拟议的面积高效的读出电路有效处理三倍增益的LOFIC CIS信号.
该设计显著减轻了SNR下降,提高了HDR成像质量.
这一进步为下一代CMOS图像传感器提供了实用解决方案.

关键词:

这是一个CMOS图像传感器.这就是HDR HDR.这是一个LOFICLOFICLOFICLOFIC.具有高SNR的地区.读出电路的读出电路.

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