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微观相场建模与准确的接口厚度表示:应用于陶矩阵复合材料.
Tong Wang1,2, Xiaofei Hu3,4, Zhi Sun1,2
1State Key Laboratory of Structural Analysis, Optimization and CAE Software for Industrial Equipment, Dalian University of Technology, Dalian 116024, China.
Materials (Basel, Switzerland)
|October 16, 2025
概括
在陶矩阵复合材料 (CMC) 中的工程接口提高了断裂性. 这项研究开发了一个相场模型,以找到最佳的接口厚度,以提高SiCf/SiCm复合材料的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 机械工程 机械工程
- 计算建模 计算建模
背景情况:
- 陶矩阵复合材料 (CMCs) 具有高温结构潜力,但由于强大的纤维矩阵粘合,其折裂性较低.
- 工程界面,如 pyrolytic carbon (PyC) 和六角化 (h-BN),对于通过转移裂和桥梁纤维来提高CMC性至关重要.
- 优化接口厚度是最大限度地提高损坏耐受性和在CMC中实现伪柔性行为的关键.
研究的目的:
- 调查接口厚度对CMC机械性能的影响.
- 为了确定最佳的接口厚度范围,以提高断裂性.
- 开发和验证一个微观相场模型,以模拟复合材料断裂行为,并具有精确的界面分辨率.
主要方法:
- 开发一个微观的相场模型,能够解析微细的接口细节和材料对比度.
- 在单向SiC纤维增强SiC矩阵 (SiCf/SiCm) 复合材料中模拟断裂行为.
- 对PyC和h-BN接口厚度的系统变化,以分析它们对机械性能的影响.
主要成果:
- 阶段场模型准确地预测了CMC断裂行为,与现有的实验数据有很强的一致性.
- 确定了最佳接口厚度,可以显著增强SiCf/SiCm复合材料的硬化效应.
- 该模型有效地克服了传统涂抹接口模型的局限性,特别是在复杂的微观结构中.
结论:
- 开发的相场模型是一个强大的预测工具,用于理解和优化易碎复合材料系统的接口设计.
- 接口工程,特别是控制接口厚度,对于释放CMC在苛刻应用中的全部潜力至关重要.
- 这项研究为设计具有卓越的断裂性和损伤耐受性的先进CMC提供了途径.
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