通过域壁运动实现物理非克隆功能的CoIr/Pt多层
Sabpreet Bhatti1, Subhakanta Das1, Badsha Sekh1
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
ACS nano
|October 16, 2025
概括
研究人员开发了一种新的CoIr/Pt材料用于自旋电子设备,可以降低能耗并提高安全性. 这一突破有助于为下一代电子产品创建更小,更高效的物理非克隆功能 (PUF) 设备.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 电气工程 电气工程
背景情况:
- 螺旋电子设备为先进的电子产品提供高可靠性和CMOS兼容性.
- 低能耗运行对于下一代电子设备至关重要.
- 需要新的材料和设备设计来释放自旋电子的潜力.
研究的目的:
- 为了引入一种新的CoIr/Pt异构结构,用于低能自旋电子应用.
- 为了证明这种异构结构在物理不可克隆功能 (PUF) 设备中的实用性.
- 通过先进的材料设计来增强硬件安全原体.
主要方法:
- 制造具有负磁晶异构的CoIr/Pt异构结构.
- 垂直磁化和低有效磁性异构能量的特征.
- 集成到旋转轨道扭矩驱动域壁 (DW) PUF 设备中.
主要成果:
- 在CoIr/Pt中通过反转Pt层的异构性来实现垂直磁化.
- 与Co/Pt堆相比,显示切换电流密度减少了五倍.
- 成功实现了一个具有独特输出和简化编程架构的4 × 32位PUF设备,克服了DW固定挑战.
结论:
- CoIr/Pt异构结构使低能,高性能的自旋电子设备成为可能.
- 这种材料有助于开发基于PUF的强大和小型化的硬件安全性.
- 这些发现为将先进的安全原体集成到电子系统中提供了有希望的途径.
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