在灵活的高密度微电极阵列中取得的进展,用于大脑-计算机接口

Seunghyeb Ban1, David Chong1, Junwoo Kwon2

  • 1George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA; Wearable Intelligent Systems and Healthcare Center (WISH Center) at the Institute for Matter and Systems, Georgia Institute of Technology, Atlanta, GA, 30332, USA.

PubMed
概括

灵活的高密度微电极阵列 (FHD-MEAs) 通过克服刚性阵列的局限性来增强脑计算机接口 (BCI). 这篇评论强调了它们在先进的神经记录,刺激和临床应用方面的潜力.

相关概念视频