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Updated: May 11, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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在氧化物颗粒边界中直接观察替代和间歇性兴奋剂扩散

Toshihiro Futazuka1, Ryo Ishikawa2, Tatsuya Yokoi3

  • 1Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo, Tokyo, Japan.

Nature communications
|October 17, 2025
PubMed
概括

像Hf这样的补充原子在氧化 (α-Al2O3) 中沿粒边界 (GBs) 迅速扩散. 这种快速扩散通过原子尺度上的空位交换和间隙机制发生,影响材料特性.

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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相关概念视频

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...