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在Zr-Doped HfO₂铁电膜中的界面层工程:极化增强和可靠性之间的权衡

Shouchen Yang¹, Wenxuan Ma¹, Yue Peng¹

¹National Engineering Research Center of Wide Band-gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an, Shaanxi 710071, China.

ACS applied materials & interfaces

|October 17, 2025

概括

氧化 (HZO) 铁电薄膜中的工程界面层通过减少界面缺陷,显著提高了非易失性记忆性能. Al2O3接口层提供了最佳的切换速度,而HfO2和ZrO2增强了极化.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
电气工程电气工程

背景情况:

基于氧化 (HfO2) 的铁电材料对于下一代非挥发性内存至关重要,因为它们具有CMOS兼容性和优良的铁电特性.
接口特性显著影响铁电器件的性能,影响诸如偏振和开关速度之类的因素.

研究的目的:

为了研究工程界面层 (Al2O3,HfO2,ZrO2) 对Zr-doped HfO2 (HZO) 薄膜的铁电特性和性能的影响.
了解基于HZO的设备中的接口特征,偏振行为,偏振损失和切换动态之间的关系.

主要方法:

制造具有各种工程接口层的HZO薄膜:Al2O3 (Al-HZO),HfO2 (Hf-HZO) 和ZrO2 (Zr-HZO).
系统地研究电气性能,包括极化性能,接口陷密度 (Dit),极化损失 (Ploss) 和切换动态.
分析界面二极管,脱极化场和相组合 (正方形相) 对设备性能的影响.

主要成果:

结合界面层有效地抑制了界面陷密度 (Dit),与控制设备相比,提高了极化性能.
阿尔-HZO显示出最强的缺陷抑制,但更大的脱极化场,略微减少剩余极化. Hf-HZO和Zr-HZO增强极化,HfO2产生了最显著的改善,这是由于增加了形相含量.
尽管极化损失较高,介电分解较早,但Al-HZO表现出最快的切换响应,最低的激活场,以及优越的局部场均性.

结论:

工程界面层在优化基于HZO的铁电晶体管在非挥发性内存应用中的性能方面发挥着至关重要的作用.
接口层材料的选择允许在极化增强,损失和切换速度之间进行量身定制的权衡.
这些发现为通过控制界面效应来设计先进的铁电记忆器件提供了宝贵的见解.

关键词:

在HfO2-ZrO2中.TDDB TDDB 这是什么意思?铁电机电机电机电机电机电机接口陷密度接口陷密度接口工程接口工程

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