在单层Cr2Si2S3Se3中,应变诱导的变磁性转变为铁磁性
Xiaoheng Sun1, Xuzhao Yu1, San-Dong Guo1
1School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, People's Republic of China.
概括
研究人员预测一个稳定的变磁半导体,Cr2Si2S3Se3.3. 施加拉伸应变会诱导磁性相位过渡,转移旋转分裂并影响谷偏振,用于旋转电子和谷电子应用.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子力学就是量子力学.
背景情况:
- 变磁材料为多功能材料提供了独特的机制.
- 了解磁相转换对于先进的电子应用至关重要.
研究的目的:
- 用第一原理计算预测变磁单层Cr2Si2S3Se3的稳定性和性能.
- 为了研究拉伸应变对磁相转换和旋转属性的影响.
- 探索磁相转换和山谷极化之间的关系.
主要方法:
- 使用第一原理计算来预测材料的稳定性和电子结构.
- 分析了拉力应变对磁性和旋转分裂的影响.
- 研究了旋转轨道合对山谷偏振的影响.
主要成果:
- 预测的Cr2Si2S3Se3是一个稳定的间接带隙半导体,具有i波旋转分裂对称性.
- 拉伸应变 (临界比 a/a0 = 1.02) 诱导了从变磁性到铁磁性的相位过渡.
- 这种过渡改变了自旋分裂,从依赖动量 (i-wave) 变为全局 (s-wave),并且在考虑自旋轨道合时消除了谷极化.
结论:
- 该研究介绍了Cr2Si2S3Se3作为一个有希望的材料,用于多功能应用.
- 这些发现突出了可调节的磁性相位过渡,可以通过应变控制.
- 这项工作表明了磁相转换和谷极化之间的联系,有利于集成旋转电子和谷极电子.
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