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Updated: Jan 14, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
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在P型4H-SiC上对米行为进行Ti接触的激光处理.

Roberto Vabres1, Gabriele Bellocchi2, Corrado Bongiorno3

  • 1Engineering Department, University of Palermo, Palermo 90128, Italy.

ACS applied electronic materials
|October 20, 2025
PubMed
概括

使用 (Ti) 进行脉冲激光化 (PLA),可以在p型碳化 (SiC) 上实现低温欧姆接触. 这种方法可以将传导性能提高50%以上,并为先进的动力设备创建稳定的Ti-Si-C接口.

关键词:
合并后的PiN Schoktty公司欧姆接触的接触是欧姆接触.阶段组合组成阶段组合脉冲激光火 脉冲激光火 脉冲激光火碳化是碳化的重要组成部分.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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