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Updated: Jan 14, 2026

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在顶侧钻石集成AlGaN/GaN高电子移动性晶体管中进行界面热传输

Husam Walwil¹, Mohamadali Malakoutian², Daniel C Shoemaker¹

¹Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.

ACS applied materials & interfaces

|October 20, 2025

概括

钻石散热器可以改善AlGaN/GaN高电子流动性晶体管 (HEMT) 的冷却. 薄薄的SiO2介层显著影响热电阻,需要仔细考虑RF功率放大器中最佳的热提取.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
热管理热管理

背景情况:

对于射频功率放大器来说,AlGaN/GaN HEMT是至关重要的,但也面临着热管理方面的挑战.
降低功率通常是为了防止过热,限制设备性能而必要的.
顶侧钻石散热器提供了一种有效散热的解决方案.

研究的目的:

为了研究在AlGaN/GaN HEMTs上的钻石散热器集成过程中,SiO2中间层引入的热边界电阻 (TBR).
量化SiO2中间层和AlGaN屏障对整体TBR的贡献.
为优化钻石散热器集成提供热建模和设计指南.

主要方法:

在AlGaN/GaN-on-SiC晶圆上沉积多晶钻散热器,使用9.7nmSiO2中间层.
使用时间域热反射率 (TDTR) 测量总TBR作为温度的函数.
多指甲AlGaN/GaN HEMT的热建模,以评估冷却效率.

主要成果:

测量室温TBR为15.8 ± 1.44 m2K GW-1,主要由SiO2中间层主导.
确定了AlGaN屏障对TBR的显著贡献.
随着温度的增加,TBR略有下降,这是由于无形SiO2.2的热导率提高所致.

结论:

SiO2中间层是限制钻石集成AlGaN/GaN HEMT中的热传递的主要因素.
AlGaN屏障也对TBR有所贡献,随着间层厚度的减少,它变得越来越重要.
热建模为优化钻石散热器集成和设备性能提供了基本的设计准则.

关键词:

的化是的化物.高电子移动性晶体管 (HEMT) 的使用多晶体钻石是一种多晶体钻石.热极限电阻 (TBR) 是指热极限的电阻.时间域热反射率 (TDTR)宽带差半导体设备的半导体设备.

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