在Ta/Ni双层中,轨道霍尔角的温度依赖性较弱
Tianren Luo1,2,3, Qingtao Xia1,2, Junda Qu1,2
1Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China.
Nanotechnology
|October 21, 2025
概括
在Ta/Ni双层中的轨道霍尔效应 (OHE) 在不同温度下进行了研究. 在旋转霍尔效应 (SHE) 上,OHE 占主导地位,温度依赖性较弱,推进了轨道电子学应用.
科学领域:
- 这就是Spintronics.
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
背景情况:
- 描述旋转霍尔角度 (SHA) 的温度依赖是理解旋转霍尔效应 (SHE) 的关键.
- 在不同温度下对轨道霍尔效应 (OHE) 的实验数据有限.
- 有效的电荷转旋转换效率 (θH) 结合了SHA和轨道霍尔角度 (OHA).
研究的目的:
- 在Ta/Ni和Ta/CoFeB双层中系统地研究有效的电荷转旋转换效率 (θH) 的温度依赖性.
- 为了确定OHE与SHE在Ta/Ni的占主导地位.
- 了解OHA在Ta/Ni中的温度依赖性.
主要方法:
- 制造Ta/Ni和Ta/CoFeB双层的材料.
- 系统地测量有效的电荷转自旋转转换效率 (θH) 从10K到300K.
- 对Ta/Ni和Ta/CoFeB样本进行比较分析,以分离OHE贡献.
主要成果:
- 在整个温度范围内,Ta/Ni中的θH仍然为正值,这表明OHE在SHE上占主导地位.
- Ta/CoFeB样本显示负 θH,与 Ta 的 SHA 一致,OHE 是可以忽略不计的.
- 随着温度的下降,Ta/Ni和Ta/CoFeB都表现出类似的θH增加趋势.
- 类似的趋势表明OHA在Ta/Ni的温度依赖性很弱.
结论:
- 轨道霍尔效应在Ta/Ni双层中起着主导作用.
- 在Ta/Ni的轨道霍尔角度显示温度依赖性较弱.
- 这些发现提高了对OHE的理解,并支持在轨道电子学中的潜在应用.
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