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对于下一代电子应用的p-GaN源集成的GaN/AlGaN/GaN双异质连接场效应晶体管 (FET)

Mohit Kumar¹, Timothée Labau^2,3, Laurent Xu²

¹Univ. Grenoble Alpes, CEA, Leti, Grenoble, 38000, France. mohit.kumar@cea.fr.

Scientific reports

|October 21, 2025

概括

这项研究优化了化 (GaN) p场效应晶体管 (p-FET) 使用双通道设计以提高性能. 优化的GaN p-FET实现了卓越的控制,高开/关比,并减少了先进电子产品的泄漏.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学
设备工程设备工程

背景情况:

高功率和高频电子需要先进的半导体材料.
化 (GaN) 场效应晶体管 (FET) 提供卓越的性能特征.
现有的GaN FET在实现最佳载体封闭和移动性方面面临挑战.

研究的目的:

为了研究和优化一种新的GaN p-FET设备架构.
探索关键设计参数对设备性能的影响.
为了实现高性能和可靠的基于GaN的电子产品.

主要方法:

使用p-GaN源对n-GaN/AlGaN/GaN双异构FET进行设备模拟.
系统检查Mg²⁺兴奋剂,接触金属工作功能,AlGaN厚度和Al分子分数.
分析二维电子气体 (2DEG) 和二维洞气体 (2DHG) 的通道形成.

主要成果:

一个优化的GaN p-FET与5nm的p-GaN层 (1×10¹⁹ cm^-3 Mg²⁺) 和10nm的AlGaN层 (0.2Al摩尔分数) 展示了卓越的性能.
实现了最佳的门电压控制 (±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±±
5.15 eV的接触金属工作功能显著降低了接触电阻和泄漏电流.

结论:

拟议的双通道GaN p-FET架构显著提高了载体的限制和移动性.
精确控制兴奋剂,层厚度和成分对于优化GaN p-FET性能至关重要.
这种优化的设备配置对于下一代高性能和可靠的电子应用程序至关重要.

关键词:

在 Al 摩尔分数中,分数为 Al 摩尔.在AlGaN的厚度.接触金属工作功能接触金属工作功能在 GaN pFET 设备上,在 Mg 兴奋剂中使用 Mg 兴奋剂在p-GaN源中.

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