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Updated: Jun 23, 2026

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在多晶 WO3薄膜中通过 p-n 异质连接定制扩散

Tim K Hecker1, Jan L Dornseifer1, Markus S Friedrich1

  • 1Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich Buff Ring 16, 35392 Giessen, Germany.

The journal of physical chemistry. C, Nanomaterials and interfaces
|October 22, 2025
PubMed
概括

在三氧化物 (WO3) 薄膜中的侧向扩散在氧化 (NiO) 层中更快. 在NiO/WO3异质连接中,

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...