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Updated: Jan 14, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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作为MXene Sc2 CF半导体的接触材料的二维TaS:一项第一原则研究

Tuan V Vu1,2, Phan T T Huyen3, Nguyen N Hieu4,5

  • 1Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University Ho Chi Minh City Vietnam tuan.vu@vlu.edu.vn.

RSC advances
|October 22, 2025
PubMed
概括

我们通过计算设计了一个稳定的2D TaS2 / Sc2CF2电子异构结构. 这种材料在电场下表现出可调节的Schottky-to-ohmic接触行为,使无障碍的充电注入成为可能.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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