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Updated: Jan 14, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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从N型兴奋剂到大面积MoS的相位过渡,通过受控的硫空位形成

Jimin Kim1, Jieun Kang2, Hyewon Han1

  • 1Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Gyeonggi-do 16419, Republic of Korea.

Nanoscale
|October 22, 2025
PubMed
概括

研究人员开发了一种使用受控离子束对二维半导体 (如二硫化物 (MoS2)) 进行兴奋剂的新方法. 该技术通过精确控制缺陷和相位过渡来提高纳米电子设备的导电性和性能.

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