从DFT到紧的非局部模型:精确高效的基于Hückel的模拟分子电子设备
N M Shubin1,2, M N Zhuravlev2, Yu A Uspenskii1
1P. N. Lebedev Physical Institute of the Russian Academy of Sciences, 119991 Moscow, Russia.
简单的模型加速了分子电子. 研究人员使用电子运输的初始计算开发了一种Hückel哈密尔顿适配模型,使得分子电子设备的准确研究成为可能.
科学领域:
- 分子电子学分子电子学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学是一种计算化学.
背景情况:
- 半导体芯片设计原则可以为分子电子学提供信息.
- 精确的建模对于推进分子电子设备至关重要.
研究的目的:
- 开发一种简单而准确的现象学模型,用于分子导体中的电子传输.
- 研究基和分子结构对电子传输特性的影响.
主要方法:
- 通过聚和聚烯分子导体进行电子传输的初步计算.
- 在对称和不对称的配置中使用各种基 (thiomethyl,pyridine,benzo[b]thiophene).
- 开发了一个基于传输光谱的现象学赫克尔哈密尔顿适配模型.
主要成果:
- 提出了一种一致的赫克尔哈密尔顿适配模型,适用于不同的配置和偏差条件.
- 分子-电极接口参数 (道合,能量转移) 主要是具特异性的.
- 电荷再分配参数严重依赖于分子内导电和分子结构.
结论:
- 开发的赫克尔哈密尔顿模型为研究分子电子设备提供了一种简单而现实的方法.
- 该模型的参数提供了对基对抗分子导电中的分子内效应的作用的见解.
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