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Updated: Jan 14, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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2D纳米电子中的接触物理学:对II型韦尔和迪拉克半金属的比较研究

Juwon Han1, Hyeonwoo Lee1, Youseung Lee2

  • 1Department of Materials Science and Engineering & Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.

ACS nano
|October 23, 2025
PubMed
概括

研究人员探索了二维 (2D) 纳米电子的II型韦尔半金属. 他们发现这些半金属,与迪拉克半金属不同,通过改善MoS2连接处的接触物理,使得无缺陷的纳米级设备成为可能.

关键词:
费米级别的固定 (FLP)金属诱导的间隙状态 (MIGS)斯科特基屏障高度 (SBH) 是斯科特基 - 莫特法则半金属接触器 半金属接触器过渡金属二甲基二甲基化物.范德瓦尔斯接口的接口

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