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Updated: May 5, 2026

Fabrication of Spatially Confined Complex Oxides
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硫氧化还原介质用于低温柔性无形氧化物CMOS电子产品.

Mingyang Wang1, Taoyu Zou2, Youjin Reo2

  • 1Institute of Fundamental and Frontier Sciences, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.

Science advances
|October 24, 2025
PubMed
概括

一种新的硫介导策略使得高性能无形p型薄膜晶体管的基于氧化物的导通通道形成. 这一突破使得超低温处理成为可能,这对于灵活的电子和补充性金属氧化物半导体 (CMOS) 技术至关重要.

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Preparation and Reactions of Sulfides02:26

Preparation and Reactions of Sulfides

Sulfides are the sulfur analog of ethers, just as thiols are the sulfur analog of alcohol. Like ethers, sulfides also consist of two hydrocarbon groups bonded to the central sulfur atom. Depending upon the type of groups present, sulfides can be symmetrical or asymmetrical. Symmetrical sulfides can be prepared via an SN2 reaction between 2 equivalents of an alkyl halide and one equivalent of sodium sulfide.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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