在InP平台上的中红外波长复合器
Kevin Zhang1, Rudolf Mayer1, Dominik Burghart1
1Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.
Nanophotonics (Berlin, Germany)
|October 27, 2025
概括
我们使用InGaAs/InP波导开发了中红外线复合器. 这些设备使宽带波长复杂化用于气体传感和自由空间通信.
科学领域:
- 光子学和光学工程的工程.
- 半导体设备 半导体设备
- 集成光学 集成光学 集成光学
背景情况:
- 中红外 (MIR) 光子对于传感和通信至关重要.
- 开发宽带MIR设备是一项挑战.
- 现有的多重技术在带宽方面存在局限性.
研究的目的:
- 为了展示新的中红外多重复合器.
- 在InGaAs/InP波导中实现宽带波长复杂化.
- 为了实现先进的MIR光子集成电路.
主要方法:
- 在0.53Ga0.47As/InP山脊波导的制造.
- 使用 evanescent 合器进行波长复杂化.
- 在5.2微米和8微米的TM00模式多重复合的特征.
主要成果:
- 成功实现了5.2微米和8微米波长的多重复合.
- 实现了0.7dB的低插入损失.
- 与排列波导网格相比,证明了显著更广泛的复杂化带宽.
结论:
- 基于联接器的多重复合器为宽带MIR应用提供了一个有前途的解决方案.
- 这些设备对于开发多色MIR光子集成电路至关重要.
- 潜在的应用包括多种气体传感和多频段自由空间通信.
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