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Updated: Jan 6, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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坚固的金属和半导体相位过渡memristor使用Ag间隔过渡金属二甲基化物

Whan Kyun Kim1,2,3, Ga Young Cho1, Thi Thanh Huong Vu1

  • 1Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Advanced materials (Deerfield Beach, Fla.)
|October 28, 2025
PubMed
概括

在二化物 (MoTe2) 中的银离子间隙使得稳健的相位过渡记忆器 (PTMEM) 操作成为可能,克服了离子的局限性. 这种Ag+MoTe2 PTMEM在高级内存应用中表现出卓越的性能.

关键词:
在Ag的间置中,Ag是间置的.纪念馆是为了纪念.移民 移民 迁移 迁移阶段过渡 阶段过渡过渡金属二甲基二甲基化物

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