双向极化控制的非挥发性铁电 SnS/α-In2Se3范德瓦尔斯异面连接用于可重新配置的内存逻辑

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Updated: Jan 13, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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Cheolhwa Jang1,2, Budhi Singh1, Jingjie Niu1,2

  • 1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.

ACS applied materials & interfaces
|October 28, 2025
PubMed
概括

研究人员开发了一种新的铁电场效应晶体管 (Fe-FET),使用SnS/α-In2Se3范德瓦尔斯异质连接. 该设备集成了非挥发性内存和逻辑功能,克服了·诺伊曼瓶,以实现高效的计算.

关键词:
铁电半导体 铁电半导体铁电 vdW 异质连接在平面内和平面外的铁电极化.在内存中的逻辑 (logic-in-memory)可以重新配置的逻辑.

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