诺博伦烯和环氧化物替代的西尔斯基奥克桑光电阻具有高灵敏度和稳定性
Rui-Sheng Zhang1, Li Miao2, Xin-Yu Lu1
1MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Zhejiang Key Laboratory of Advanced Organic Materials and Technologies, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310058, China.
ACS nano
|October 28, 2025
概括
新的部分替代的丝素 (PASS) 抗超越丝素 (HSQ) 极紫外线 (EUV) 光刻的限制. 这些先进的光电阻提供了提高稳定性和灵敏性,用于高分辨率的纳米制造.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 化学 化学 化学
背景情况:
- 极端紫外线 (EUV) 光刻需要先进的光电阻,以达到20nm以下的图案保真度.
- 在EUV应用中,由于不稳定性和低灵敏度,丝 (HSQ) 面临着挑战.
研究的目的:
- 为了开发新的部分基替代丝素 (PASS) 抵抗,以解决HSQ的限制.
- 为了提高高分辨率光刻画的光电阻性能.
主要方法:
- 将光酸发生器 (PAG) 集成到 PASS 抵抗配方中.
- 使用电子束 lithography 的石版性能评价.
- 使用微拉曼光谱和模型化合物研究进行表征.
主要成果:
- 实现了14nm分辨率,线边粗度为1.3nm.
- 证明了高灵敏度 (4.3μC/cm2) 和对比度 (5.1).
- 与HSQ相比,表现出360天的凝期和160倍的稳定性改善.
结论:
- 通过双重机制,PAG集成增强了PASS抵抗灵敏度和货架稳定性.
- 通过抵抗是半导体纳米制造中EUV光刻的可行的候选人.
- 通过的结构可调性抵抗支持各种纳米制造应用.
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