开发原子级薄膜沉积系统,用于垂直磁道连接处,具有高道磁阻力
Siyuan Cheng1, Houyi Cheng1,2,3, Yuxuan Yao1
1MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.
The Review of scientific instruments
|October 28, 2025
概括
研究人员开发了一种先进的磁道连接 (MTJ) 沉积系统,可实现精确的原子尺度控制,以提高磁随机访问存储器 (MRAM) 性能和更高的道磁阻 (TMR) 比率.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 电气工程 电气工程
背景情况:
- 磁随机存储器 (MRAM) 的发展依赖于对磁道连接 (MTJ) 的研究.
- 现有的学术沉积系统往往缺乏原子级控制,自动化和沉积后处理,限制了道磁阻 (TMR) 比率.
研究的目的:
- 为垂直MTJ (p-MTJ) 制造开发一个优化的沉积系统.
- 解决原子级沉积,自动化和工艺控制方面的局限性,以加强MRAM研究.
主要方法:
- 在阴极,样本操纵器和自动沉积软件中实现了优化.
- 引入了一个专门的回火后室,以改善垂直磁性异构性 (PMA) 和TMR.
- 介绍了薄膜的特性,包括介面粗度和PMA在不同厚度的CoFeB.
主要成果:
- 实现了较低的界面粗度 (MgO Ra <0.35 nm,其他 Ra <0.25 nm).
- 证明了CoFeB/MgO多层的原子尺度沉积分辨率,具有广泛的PMA控制.
- 在全p-MTJ中通过系统微调实现了135%的TMR比率.
结论:
- 开发的系统为p-MTJ沉积提供了精确的原子尺度控制.
- 该系统能够增强PMA和TMR,这对MRAM性能至关重要.
- 为MRAM研究和技术创新提供了一个更有效的平台.
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