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Updated: Jan 13, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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扫描道显微镜 内在点缺陷的特征及其局部密度的状态在α-In2Se3

Wenhui Pang1,2, Zi Liu1,2, Jieying Li1,2

  • 1International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, Anhui 230026, People's Republic China.

Nano letters
|October 28, 2025
PubMed
概括

在印化物 (In2Se3) 中表现出内在缺陷. 印空缺导致p-doping,而印抗体导致n-doping,使双极性兴奋剂成为未来电子设备的关键.

关键词:
双极性兴奋剂是双极性兴奋剂.内在缺陷是内在的缺陷.国家的局部密度.扫描道显微镜扫描道显微镜α-In2Se3Se3 的情况.

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相关概念视频

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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