在Bi0.5Na0.5TiO3基于电影中的高压电响应的极化配置调节的泡域
Yang Liu1,2,3, Guohui Li1, Simin Wang1,3
1Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China.
ACS applied materials & interfaces
|October 28, 2025
概括
研究人员使用简单的极化设计在甲酸薄膜中设计了拓气泡域. (111) 导向的电影显示了增强的域形成和压电反应,为纳米电子提供了新的策略.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 铁电材料 铁电材料
背景情况:
- 拓气泡领域具有显著的应用潜力,但受到基薄膜要求的限制.
- 稳定这些域通常需要复杂的边界条件,这阻碍了铁电材料的广泛使用.
研究的目的:
- 为了实现可控制的泡域工程在酸 (Bi$_{0.5}$Na$_{0.5}$TiO$_{3}$) 表面膜.
- 为了研究薄膜方向对气泡域特征和压电特性的影响.
主要方法:
- 用相场模拟来建模域行为.
- 用多尺度实验性表征来分析片的特性.
- 可控泡域工程是通过极化配置设计实现的.
主要成果:
- 发现泡域密度和大小随着电影定向的米勒指数较高而增加.
- (111) 导向的电影表现出复杂的极化配置,促进 toroidal 泡域的形成.
- 这些域增强了极化旋转,从而在以111为导向的片中产生了优越的压电反应.
结论:
- 开发了一个简单的策略来操纵铁电膜中的拓学域.
- 这些发现为开发高性能纳米电子设备提供了关键指导.
- 在Bi$_{0.5}$Na$_{0.5}$TiO$_{3}$膜中工程泡域为增强压电特性提供了一条途径.
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