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Updated: Jan 13, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

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在AlGaN/GaN异构中,AlN盖层对极化库伦场散射的影响 场效应晶体管

Qianding Cheng1,2, Ming Yang1, Zhiliang Gao1,2

  • 1Beijing Orient Institute of Measurement and Test, Beijing 100094, China.

Micromachines
|October 29, 2025
PubMed
概括

在AlGaN/GaN HFET中的AlN盖层减少了极化散射,增强了电子的移动性. 这种结构优化通过抑制不必要的电荷产生来提高设备性能.

关键词:
在AlGaN/GaN HFET中使用.在 AlN 封顶层中,电子流动性的电子流动性.极化 库伦波场散射 极化 库伦波场散射

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