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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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在2O3薄膜晶体管中优化热温度,以提高解决方案处理的电性能和稳定性.

Taehui Kim1, Seullee Lee2, Ye-Won Lee2

  • 1School of Semiconductor Display Technology, Hallym University, Chuncheon 24252, Republic of Korea.

Micromachines
|October 29, 2025
PubMed
概括

优化氧化物 (In2O3) 薄膜的化温度对于高性能电子产品至关重要. 450°C的回火温度在In2O3薄膜晶体管 (TFT) 中产生了电气性能和稳定性的最佳平衡.

关键词:
拉曼光谱法 拉曼光谱法这是歇斯底里症.印度氧化物 印度氧化物通过溶液处理处理的.热化热化 热化薄膜晶体管是一种薄膜晶体管.

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科学领域:

  • 材料科学 材料科学 材料科学
  • 固态物理 固态物理
  • 纳米技术纳米技术

背景情况:

  • 溶液处理的氧化 (In2O3) 薄膜对下一代电子产品具有前景.
  • 热是一种影响薄膜特性和设备性能的关键步骤.

研究的目的:

  • 为了研究沉积后热回火温度对In2O3薄膜的影响.
  • 确定基于In2O3的高性能薄膜晶体管 (TFT) 的最佳回火条件.

主要方法:

  • 热重力测量分析 (TGA) 指导了回火温度的选择 (350,450,550°C).
  • 描述技术包括UV-Vis光谱,AFM,拉曼光谱和霍尔效应测量.
  • 评估重点是光学,形态,晶体和电气性能.

主要成果:

  • 在450°C冷的In2O3薄膜显示了4.28 cm2/V·s的场效应移动性和2.15 × 107.7的开/关比.
  • 歇斯底里电压随着热温度的增加而降低 (3.11 V 在 350 °C,1.80 V 在 450 °C,0.92 V 在 550 °C).
  • 在450°C的回火条件下,性能和稳定性之间提供了最佳的权衡.

结论:

  • 沉积后的回火温度显著影响溶液处理的In2O3薄膜的性能.
  • 450°C的火温度是制造高性能和稳定的In2O3 TFT的最佳条件.
  • 这些发现支持在先进的氧化物电子中使用优化的In2O3薄膜.