相关实验视频

Updated: May 2, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

基于蒙特卡洛方法的SiC材料的线性能量转移研究

Jiamu Xiao¹, Heng Xie², Shougang Du¹

¹Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an 710071, China.

|October 29, 2025

概括

这项研究模拟了使用Geant4.4在碳化物 (SiC) 斯科特基二极管中的能量沉积. 它揭示了粒子类型,能量和入射角度如何影响线性能量转移 (LET),这对设备可靠性至关重要.

科学领域:

半导体物理半导体物理
电子产品中的辐射效应.
材料科学材料科学材料科学

背景情况:

碳化 (SiC) Schottky二极管在高功率电子产品中至关重要.
了解粒子相互作用对于辐射下的设备可靠性至关重要.
Geant4模拟为分析能量沉积提供了一个强大的工具.

研究的目的:

模拟SiC Schottky二极管中的能量沉积过程.
研究各种参数对线性能量转移 (LET) 的影响.
提供关于SiC设备中单粒子相互作用效应的见解.

主要方法:

使用Geant4工具包进行粒子轰炸模拟.
模拟的质子,α粒子和β粒子.
不同的撞击角度,目标材料和兴奋剂度.

主要成果:

质子LET显示低能量的振荡,然后指数衰变. 阿尔法粒子在1 MeV附近达到峰值;β粒子呈指数级下降.
LET在低能量的情况下呈指数增长,在高能量的情况下呈线性增长.
质子LET在低能量时取决于角度;α粒子LET在很大程度上取决于角度.

结论:

在SiC中的LET受到粒子类型,能量和撞击角度的显著影响.
模拟结果为预测SiC设备在辐射下的行为提供了关键数据.
这些发现有助于设计辐射硬化SiC电子元件.

关键词:

设置设置设置如果是SiC SiC 线性能量转移是线性的.蒙特卡罗山是什么意思

更多相关视频

Production of Single Tracks of Ti-6Al-4V by Directed Energy Deposition to Determine the Layer Thickness for Multilayer Deposition

Production of Single Tracks of Ti-6Al-4V by Directed Energy Deposition to Determine the Layer Thickness for Multilayer Deposition

Published on: March 13, 2018

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

相关概念视频

Carrier Transport

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:

Electrical Transport

Electrical Transport

The electrical transport property of a material is defined by its resistance and conductivity. Resistance is the measure of a material's ability to resist the flow of electric current, while conductivity gauges its ability to allow the current to pass through, depending on the geometry of the measurement cell, such as electrode spacing and area. Conductivity is measured in Siemens (S). There are different types of conductance, including specific conductance, equivalent conductance, and molar...