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Updated: Jan 13, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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准备和性能探索MoS2/WSe2范德瓦尔斯异质连接道化场效应晶体管的准备和性能探索

Chen Chong1, Hongxia Liu1, Shulong Wang1

  • 1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|October 29, 2025
PubMed
概括

过渡金属二甲基化物 (TMDs) 对灵活的电子有希望. 这项研究制造了MoS2/WSe2范德瓦尔斯异质连接道场效应晶体管 (TFET),实现了低功耗应用的高电流切换比率.

关键词:
TFET (道化场效应晶体管) 是一种过渡金属二甲基化物 (TMD) 是一种过渡金属二甲基化物.范德瓦尔斯的异质连接.

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