低功率周期高功率微波脉冲诱导的GaN HEMT中的降解和损伤效应
Dong Xing1, Hongxia Liu1, Mengwei Su1
1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|October 29, 2025
概括
高功率微波 (HPM) 压力可以降解化高电子移动性晶体管 (GaN HEMT). 超过43dBm的功率会导致雪崩故障,通过热积累导致设备永久性故障.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 化高电子移动性晶体管 (GaN HEMT) 对于射频 (RF) 应用至关重要.
- 了解它们在高功率微波 (HPM) 压力下的可靠性对于设备的寿命至关重要.
研究的目的:
- 调查HPM对GaN HEMTs的影响和故障机制.
- 在低工作周期和狭窄脉冲宽度条件下分析降解行为.
主要方法:
- 在GaN HEMTs的门口注入HPM.
- 使用的直流特征,门延迟效应分析和低频噪声测量.
- 进行了聚焦离子束 (FIB) 横截面检查以进行物理分析.
主要成果:
- 低功率HPM应力 (<43dBm) 由于缺陷被动化导致了微小的门电压变化和传导率增加.
- 高功率HPM压力 (>43dBm) 诱导了雪崩破坏,泄漏路径形成和局部热积累.
- 在更高的HPM功率水平下观察到永久的设备故障.
结论:
- 在低功率周期HPM压力下,揭示了GaN HEMT的物理失效机制.
- 提供了对设备退化和故障模式的见解.
- 提供了针对HPM的射频设备可靠性设计和强化指南.
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