低功率周期高功率微波脉冲诱导的GaN HEMT中的降解和损伤效应

Dong Xing1, Hongxia Liu1, Mengwei Su1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|October 29, 2025
PubMed
概括

高功率微波 (HPM) 压力可以降解化高电子移动性晶体管 (GaN HEMT). 超过43dBm的功率会导致雪崩故障,通过热积累导致设备永久性故障.