对STT和SOT-MRAM的开放磁屏包装进行研究
Haibo Ye1, Xiaofei Zhang2, Nannan Lu1
1The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China.
Micromachines
|October 29, 2025
概括
研究人员开发了一种开放的磁屏蔽结构,以保护磁电阻随机访问存储器 (MRAM) 免受外部磁场的影响. 这一创新显著提高了MRAM在苛刻应用中的可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 磁电阻随机访问存储器 (MRAM) 提供了高可靠性和速度,使其在工业上具有重要意义.
- 磁道连接 (MTJ) 的核心易受外部磁场的影响,这限制了它在恶劣环境中的使用.
研究的目的:
- 为MRAM提出和评估一个创新的开放磁屏蔽结构.
- 为了提高反磁能力和旋转转移扭矩 (STT) 和旋转轨道扭矩 (SOT) MRAM的可靠性.
主要方法:
- 开发一个开放的磁屏蔽结构.
- 使用有限元磁模拟来评估对平面内和垂直磁场的屏蔽效果.
- 在不同的包装结构高度下评估性能.
主要成果:
- 拟议的结构显著降低了芯片级磁场强度:在平面内磁场下降到1,在垂直磁场下降到2 (应用了40mT).
- 屏蔽性能独立于包装结构高度,确保广泛的兼容性.
- 在平面内和垂直磁场上都表现出了显著的屏蔽效果.
结论:
- 开放的磁屏结构有效地保护MRAM免受外部磁干扰.
- 这种设计显著提高了MRAM的抗磁能力,这对于苛刻的应用至关重要.
- 这项研究为MRAM包装中高度可靠的磁屏蔽提供了可行的解决方案.
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