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Updated: Jan 13, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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在商业E-Mode GaN-on-Si HEMT中切换2-DEG通道的影响

Roberto Baca-Arroyo1

  • 1Department of Electronics, National Polytechnic Institute, School of Mechanical and Electrical Engineering, Mexico City 07738, Mexico.

Micromachines
|October 29, 2025
PubMed
概括

本研究研究了E模式的GaN-on-Si HEMT中的二维电子气体 (2-DEG) 通道. 研究表明,切换传导模式如何取决于工作频率,温度和材料特性.

关键词:
基于物理学的教学模型.低功率的 GaN 晶体管是一种低功率的 GaN 晶体管.p-GaN 门 HEMT 门 HEMT 的时间这是一个p-GaN/n-AlGaN/i-GaN异质连接.切换传导方式 切换传导模式

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