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Updated: Jan 13, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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高压电力电子技术的进步使用Ga2O基于HEMT:建模

Reem Alhasani1, Hadba Hussain1, Mohammed A Alkhamisah1

  • 1King Abdulaziz City for Science and Technology (KACST), Energy and Industry Sector, Microelectronics and Semiconductors Institute, Riyadh 11442, Saudi Arabia.

Materials (Basel, Switzerland)
|October 29, 2025
PubMed
概括

氧化 (Ga2O3) 通过创建二维电子气体 (2DEG) 通道,增强化 (GaN) 高电子流动性晶体管 (HEMT). 这种先进的缓冲层提高了下一代动力电子产品的性能.

关键词:
在GaN基板上.这是一个TCAD模拟.氧化 (Ga2O3) 是一种氧化.高电子移动性晶体管 (HEMT) 是一种高电子移动性晶体管.接口的两极化电力电子产品的动力电子.表面电荷建模模型门电压的门电压是什么二维电子气体 (2DEG) 是一个二维的电子气体.超宽带间隙 (UWBG) 超宽带间隙

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